Temperature fields in a growing solar silicon crystal

  • A. I. Kondrik National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Kharkiv, Ukraine
  • O. A. Datsenko National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Kharkiv, Ukraine
  • G. P. Kovtun National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Kharkiv, Ukraine
Keywords: solar silicon, thermal fields, rate of directional crystallization, crystal size

Abstract

The optimal thermal terms for growing by Czochralski method Si single-crystals, suitable for making photoelectric energy converters, has been defined by the computer simulation method. Dependences of temperature fields character and crystallization front form on the diameter of the crystal, stage and speed of growing, and also on correlation between diameter and height of the crystal has been studied.

Published
2012-06-25
How to Cite
Kondrik, A. I., Datsenko, O. A., & Kovtun, G. P. (2012). Temperature fields in a growing solar silicon crystal. Technology and Design in Electronic Equipment, (3), 21-25. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2012.3.21
Issue
No. 3 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Kondrik A. I., Datsenko O. A., Kovtun G. P.

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