Іnfluence of initial defects on the distribution of mechanical stresses and deformations during silicon oxidation

  • O. A. Kulinich I. I. Mechnikov Odesa National University, Ukraine
  • V. A. Smyntyna I. I. Mechnikov Odesa National University, Ukraine
  • M. A. Glauberman I. I. Mechnikov Odesa National University, Ukraine
  • G. G. Chemeresyuk I. I. Mechnikov Odesa National University, Ukraine
  • I. R. Yatsunskiy I. I. Mechnikov Odesa National University, Ukraine
Keywords: silicon, oxide, defects

Abstract

Using modern methods, the complex structure of near-surface silicon layers in the “silicon — silicon dioxide” systems has been investigated. The dependencies of the parameters of these layers on oxidation conditions and the characteristics of the initial silicon have been identified. The influence of initial defects on the distribution of mechanical stresses and strains during silicon oxidation has been demonstrated.

Published
2008-10-30
How to Cite
Kulinich, O. A., Smyntyna, V. A., Glauberman, M. A., Chemeresyuk, G. G., & Yatsunskiy, I. R. (2008). Іnfluence of initial defects on the distribution of mechanical stresses and deformations during silicon oxidation. Technology and Design in Electronic Equipment, (5), 62-64. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2008.5.62
Issue
No. 5 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Kulinich O. A., Smyntyna V. A., Glauberman M. A., Chemeresyuk G. G., Yatsunskiy I. R.

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This work is licensed under a Creative Commons Attribution 4.0 International License.