Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes
Abstract
The results of investigation of developed thermal imager for middle (3—5 µm) infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor) via indium microcontacts. The measured average value of noise equivalent temperature difference was NETD= 20±4 mK (background radiation temperature T = 300 K, field of view 2θ = 180°, the cooled diaphragm was not used).
Copyright (c) 2010 Reva V. P., Golenkov A. G., Zabudskiy V. V., Korinets S. V., Tsybriy Z. F., Gumenjuk-Sichevska J. V., Bunchuk S. G., Apatskaya M. V., Lysiuk I. А., Smoliy М. I.
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