Thermal mathematical model of semiconductor devices for measurement of current-voltage characteristics by pulse method

  • Ye. O. Yermolenko Donbas State Technical University, Alchevsk, Ukraine
  • O. F. Bondarenko Donbas State Technical University, Alchevsk, Ukraine
  • O. M. Baranov Donbas State Technical University, Alchevsk, Ukraine
Keywords: current-voltage characteristics, semiconductor device, pulse method of measurement, thermal model

Abstract

The thermal mathematical model is used to estimate self-heating of semiconductor devices of various types during current-voltage characteristics measuring by the pulse method. The influence of self-heating on electrical parameters of semiconductor devices is analyzed. The recommendations for determination of values of measuring pulse sequence parameters are formulated to minimize self-heating of semiconductor structure.

Published
2012-10-23
How to Cite
Yermolenko, Y. O., Bondarenko, O. F., & Baranov, O. M. (2012). Thermal mathematical model of semiconductor devices for measurement of current-voltage characteristics by pulse method. Technology and Design in Electronic Equipment, (5), 14-18. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2012.5.14
Issue
No. 5 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Yermolenko Ye. O., Bondarenko O. F., Baranov O. M.

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This work is licensed under a Creative Commons Attribution 4.0 International License.