Si1–xGex nanocrystals as sensitive elements for magnetic field and temperature sensors

  • А. A. Druzhinin Lviv Polytechnic National University, Lviv, Ukraine
  • І. P. Ostrovskii Lviv Polytechnic National University, Lviv, Ukraine
  • Yu. М. Khoverko Lviv Polytechnic National University, Lviv, Ukraine
  • S. І. Nichkalo Lviv Polytechnic National University, Lviv, Ukraine
  • R. М. Koretskii Lviv Polytechnic National University, Lviv, Ukraine
Keywords: nanowhiskers, magnetoresistance, sensor

Abstract

The paper deals with investigation of magnetic field effect on electrophysical properties of Si1–xGex nanowhiskers at low temperatures. It was shown that field dependence of resistance of Si1–xGex nanowhiskers samples doped to concentrations near the dielectric side of metal-insulator junction possesses the linear character. The concept of making sensors on the basis of Si1–xGex nanowhiskers detecting simultaneously magnetic field and temperature has been proposed.

Published
2012-10-23
How to Cite
DruzhininА. A., OstrovskiiІ. P., KhoverkoY. М., NichkaloS. І., & KoretskiiR. М. (2012). Si1–xGex nanocrystals as sensitive elements for magnetic field and temperature sensors. Technology and Design in Electronic Equipment, (5), 19-21. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2012.5.19
Issue
No. 5 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Druzhinin А. A., Ostrovskii І. P., Khoverko Yu. М., Nichkalo S. І., Koretskii R. М.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.