Photoelectric properties of n-SiC/n-Si heterojunctions

  • A. V. Semenov Odesa National Polytechnic University, Odesа, Ukraine
  • А. А. Kozlovskii Odesa National Polytechnic University, Odesа, Ukraine
  • V. M. Puzikov Odesa National Polytechnic University, Odesа, Ukraine
Keywords: silicon carbide, photovoltaic effect, heterojunction

Abstract

Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction) was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barriers caused by band offsets was proposed to explain the current-voltage characteristics and photovoltaic properties of the heterostructure n-SiC/n-Si.

Published
2012-10-23
How to Cite
Semenov, A. V., KozlovskiiА. А., & Puzikov, V. M. (2012). Photoelectric properties of n-SiC/n-Si heterojunctions. Technology and Design in Electronic Equipment, (5), 27-30. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2012.5.27
Issue
No. 5 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Semenov A. V., Kozlovskii A. A., Puzikov V. M.

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