Influence of base impurity distribution on the photoelectric properties of surface-barrier UV photodetectors

  • Yu. N. Bobrenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. N. Komaschenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • N. V. Yaroshenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • G. I. Sheremetova V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • B. S. Atdaev V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: surface-barrier structures, A2B6 compounds, UV photodetector, spectral characteristics, V-I characteristic, C-V characteristic

Abstract

The article presents the study on spectral, capacitance-voltage and current-voltage characteristics of surface-barrier structures based on A2B6 composition with different carrier concentration profiles in space-charge region sensitive to ultraviolet range and perspective for ultraviolet sensor application.

Published
2012-10-23
How to Cite
Bobrenko, Y. N., Komaschenko, V. N., Yaroshenko, N. V., Sheremetova, G. I., & Atdaev, B. S. (2012). Influence of base impurity distribution on the photoelectric properties of surface-barrier UV photodetectors. Technology and Design in Electronic Equipment, (5), 35-38. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2012.5.35
Issue
No. 5 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Bobrenko Yu. N., Komaschenko V. N., Yaroshenko N. V., Sheremetova G. I., Atdaev B. S.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.