The investigation of quality of power-transistor crystals soldering by a transient impedance-spectrometer

  • A. S. Turtsevich JSC INTEGRAL, Minsk, Belarus
  • I. I. Rubtsevich JSC INTEGRAL, Minsk, Belarus
  • Ya. А. Solov’yov JSC INTEGRAL, Minsk, Belarus
  • O. S. Vas’kov BNTU, Minsk, Belarus
  • V. K. Kononenko BNTU, Minsk, Belarus
  • V. S. Niss
  • A. F. Kerentsev JSC INTEGRAL, Minsk, Belarus
Keywords: transistor, thermal resistance, transient impedance-spectrometer, crystal attachment

Abstract

Differential distribution profiles of the thermal «junction-to-case» resistance of KP723G transistors in accordance with the attachment of the crystals into the package have been investigated. Spectra of thermal resistances were calculated from the analysis of the temporal dependence of the dynamic thermal impedance obtained by a new non-destructive method of differential spectroscopy. The dependence of internal thermal resistance of transistor structure components on the thermal relaxation time constant is presented.

Published
2012-10-23
How to Cite
Turtsevich, A. S., Rubtsevich, I. I., Solov’yovY. А., Vas’kov, O. S., Kononenko, V. K., Niss, V. S., & Kerentsev, A. F. (2012). The investigation of quality of power-transistor crystals soldering by a transient impedance-spectrometer. Technology and Design in Electronic Equipment, (5), 44-47. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2012.5.44
Issue
No. 5 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Turtsevich А. S., Rubtsevich I. I., Solov’yov Ya. А., Vas’kov O. S., Kononenko V. К., Niss V. S., Kerentsev А. F.

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