Influence of copper intercalation on thermoelectric properties change in Bi2Te3 <Cu> doped crystals during storage

A. P. Aliyeva; S. Sh. Gahramanov; A. Sh. Gahramanov

doi:10.15222/TKEA2016.2-3.49

A. P. Aliyeva Azerbaijan Technical University, Baku, Azerbaijan
S. Sh. Gahramanov Azerbaijan Technical University, Baku, Azerbaijan
A. Sh. Gahramanov Baku State University, Baku, Azerbaijan

DOI: https://doi.org/10.15222/TKEA2016.2-3.49

Keywords: thermoelectric materials, defect centers, crystals, dissipative nanostructures

Abstract

The authors investigate the change in the thermoelectric properties of Bi₂Te₃ <Cu> crystals doped by bismuth and indium during their storage. It is shown that such change is caused by the spontaneous overflow of Cu atoms deposited during the initial crystallization period between Te⁽²⁾-Bi and Bi-Te⁽²⁾ layers, and in defect centres perpendicularly to the surface of the crystal (0001), which culminates in the formation of dissipative nanostructures. It was found that thermoelectric properties of crystals doped with indium undergo the most significant change.

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