[1]
Vakiv, M.M., Krukovskiy, S.I., Zayachuk, D.M., Mykhashchuk, I.S. and Krukovskiy, R.S. 2010. Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes. Technology and design in electronic equipment. 3 (Jun. 2010), 50-53.