Gulyaev, Yu. V., A. G. Zhdan, and G. V. Chucheva. “The New Approach to the Creation of the Nonvolatile Memory Based on Si-MOS-Transistors”. Technology and design in electronic equipment, no. 3 (June 28, 2011): 3-5. Accessed May 9, 2026. https://tkea.com.ua/index.php/journal/article/view/TKEA2011.3.03.