UDC 621.375.5:621.382.2
Pulse power single-diode microwave oscillator based Tarasyuk V. M., Basanets V. V., Boltovets M. S., Zorenko O. V., Kolisnyk M. V. The test results of prototype of Ka-band silicon double-drift power IMPATT diodes are presented. These diodes are intended for making IMPATT oscillators with pulse power more than 35 W at 300 ns pulse width. Ukraine, Kiev, RI «Orion». |