Photodiode based on GaP sensitized to short-wave region of UV spectrum

  • Yu. G. Dobrovol’skii SPF «Tensor», Chernivtsy, Ukraine
Keywords: photodiode, gallium phosphide, computer design, sensitivity

Abstract

An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+–n-GaP–SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structure can reach 0,1–0,12 A/W.

Published
2012-10-23
How to Cite
Dobrovol’skii, Y. G. (2012). Photodiode based on GaP sensitized to short-wave region of UV spectrum. Technology and Design in Electronic Equipment, (5), 31-34. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2012.5.31
Issue
No. 5 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Dobrovol’skii Yu. G.

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