Microchip lasers

  • A. O. Matkovsky Lviv Polytechnic National University, Ukraine
  • I. M. Syvorotka SPA «Karat», Lviv, Ukraine
  • S. B. Ubizskii SPA «Karat», Lviv, Ukraine
  • S. S. Melnyk SPA «Karat», Lviv, Ukraine
  • M. M. Vakiv SPA «Karat», Lviv, Ukraine
  • I. I. Izhnin SPA «Karat», Lviv, Ukraine
Keywords: microchip lasers, diode-pumped solid-state microlasers, passive Q-switching, single-mode radiation, epitaxial structures, YAG-Nd/YAG-Cr, GGG-Nd/GGG-Cr, active medium

Abstract

A new generation of diode-pumped solid-state microlasers — passively Q-switched microchip lasers — are promising sources of coherent single-mode radiation in applications requiring short pulses with energies of several microjoules at peak powers of tens of kilowatts. The authors present their own results on the growth and testing of YAG-Nd/YAG-Cr and GGG-Nd/GGG-Cr epitaxial structures as active media for passively Q-switched microchip lasers.

Published
2002-06-30
How to Cite
Matkovsky, A. O., Syvorotka, I. M., Ubizskii, S. B., Melnyk, S. S., Vakiv, M. M., & Izhnin, I. I. (2002). Microchip lasers. Technology and Design in Electronic Equipment, (3), 15-21. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2002.3.15
Issue
No. 3 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Matkovsky A. O., Syvorotka I. M., Ubizskii S. B., Melnyk S. S., Vakiv M. M., Izhnin I. I.

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This work is licensed under a Creative Commons Attribution 4.0 International License.