Production of GaAs—InGaAs—AlGaAs tandem heterostructures for solar photovoltaic converters

  • Yu. Ye. Nikolaienko SPA «Karat», Lviv, Ukraine
  • S. I. Krukovskyi SPA «Karat», Lviv, Ukraine
  • I. R. Zaverbnyi SPA «Karat», Lviv, Ukraine
  • O. V. Rybak SPA «Karat», Lviv, Ukraine
  • I. A. Mrykhin SPA «Karat», Lviv, Ukraine
Keywords: tandem heterostructures, solar photovoltaic converters, LPE method, p—n junction, avalanche diode, scanning electron microscopy

Abstract

Technological features of obtaining multi-layer heterostructures in the GaAs—InGaAs—AlGaAs system with three p—n junctions by the LPE method are considered. The heterostructures are intended for the fabrication of highly efficient space-based solar photovoltaic converters. A specific feature of the heterostructures is the presence of an avalanche diode connecting the narrow-gap and wide-gap p—n junctions. The electrophysical characteristics of AlGaAs layers doped with Mg and Bi are investigated. The results of tandem heterostructure studies using scanning electron microscopy are presented.
Published
2002-06-30
How to Cite
Nikolaienko, Y. Y., Krukovskyi, S. I., Zaverbnyi, I. R., Rybak, O. V., & Mrykhin, I. A. (2002). Production of GaAs—InGaAs—AlGaAs tandem heterostructures for solar photovoltaic converters. Technology and Design in Electronic Equipment, (3), 27-29. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2002.3.27
Issue
No. 3 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Nikolaienko Yu. Ye., Krukovskyi S. I., Zaverbnyi I. R., Rybak O. V., Mrykhin I. A.

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