Capacitance–voltage characteristics of ion-implanted GaAs structures

  • N. B. Gorev Institute of Technical Mechanics NASU and SSAU, Dnepropetrovsk, Ukraine
  • I. F. Kodzhespirova Institute of Technical Mechanics NASU and SSAU, Dnepropetrovsk, Ukraine
  • E. N. Privalov Institute of Technical Mechanics NASU and SSAU, Dnepropetrovsk, Ukraine
Keywords: gallium arsenide, ion-implanted structure, Schottky barrier, capacitance-voltage characteristic, deep traps

Abstract

A non-iterative numerical method has been proposed for calculating the dependence of the barrier capacitance of ion-implanted GaAs structures on the voltage across the Schottky barrier. The specific features of the low- and high-frequency capacitance–voltage characteristics of these structures, caused by the presence of deep trapping centers, have been identified.

Published
2008-08-30
How to Cite
Gorev, N. B., Kodzhespirova, I. F., & Privalov, E. N. (2008). Capacitance–voltage characteristics of ion-implanted GaAs structures. Technology and Design in Electronic Equipment, (4), 52-54. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2008.4.52
Issue
No. 4 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Gorev N. B., Kodzhespirova I. F., Privalov E. N.

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