Chemical vapor deposition of hetero- and nanostructures of III–V compounds

Abstract

The results of a phenomenological study based on the in-situ method of UV spectroscopy of the gas-phase composition in the source regions of GaAs, GaP, In, Ga, and In/Ga in a horizontal flow reactor are described. The experimental results are used to analyze the growth process of GaAs:Bi, GaAs_1–хP_х, In_1–хGa_хAs, In_хGa_1–хAs_уP_1–у layers by a low-temperature isothermal gas-transport chloride epitaxy method. The obtained data make it possible to determine the temperature and the range of carrier gas (H₂) flow rates required to form a supersaturated gas phase during low-temperature growth of hetero- and nanostructures based on GaAs, GaAs_1–хP_х, In_1–хGa_хAs, In_хGa_1–хAs_уP_1–у layers.