Formation of delta-doped p-layer of hydrogen in natural and CVD-diamond crystals

  • A. A. Altukhov TCP "UralAlmazInvest", Moscow, Russia
  • M. S. Afanas’ev TCP "UralAlmazInvest", Moscow, Russia
  • K. N. Zyabliuk TCP "UralAlmazInvest", Moscow, Russia
  • A. Yu. Mityagin Fryazino Branch of V.A. Kotelnikov IRE, Russia
  • N. H. Talipov Fryazino Branch of V.A. Kotelnikov IRE, Russia
  • G. V. Chucheva Fryazino Branch of V.A. Kotelnikov IRE, Russia
Keywords: diamond, hydrogenation, microwave transistors, Schottky barriers

Abstract

A method is proposed for the hydrogen heat treatment of natural and CVD-diamond crystals, which can serve as an alternative to conventional method of forming H-layer in microwave plasma of hydrogen as a simpler one and more reproducible. The boundaries of thermal stability of hydrogenated diamond surface are determined. It is shown that aluminum deposited on hydrogenated during the hydrogen heat treatment diamond surface can serve as a Schottky gate in microwave field-effect transistor made with MESFET technology.

Published
2011-10-17
How to Cite
Altukhov, A. A., Afanas’ev, M. S., Zyabliuk, K. N., Mityagin, A. Y., Talipov, N. H., & Chucheva, G. V. (2011). Formation of delta-doped p-layer of hydrogen in natural and CVD-diamond crystals. Technology and Design in Electronic Equipment, (5), 14-16. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2011.5.14
Issue
No. 5 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Altukhov A. A., Afanas’ev M. S., Zyabliuk K. N., Mityagin A. Yu., Talipov N. H., Chucheva G. V.

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This work is licensed under a Creative Commons Attribution 4.0 International License.