Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix

  • E. V. Andronova Kherson National Technical University, Kherson, Ukraine
  • Ye. A. Baganov Kherson National Technical University, Kherson, Ukraine
  • V. V. Kurak Kherson National Technical University, Kherson, Ukraine
Keywords: low-dimensional structures, indium antimonide, gallium antimonide, liquid phase epitaxy, photoluminescence spectrum, radiative transition

Abstract

Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low-dimensional structures formed on InSb wetting layer with thickness of 2 nm.

Published
2011-10-17
How to Cite
Andronova, E. V., Baganov, Y. A., & Kurak, V. V. (2011). Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix. Technology and Design in Electronic Equipment, (5), 35-38. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2011.5.35
Issue
No. 5 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Andronova E. V., Baganov Ye. A., Kurak V. V.

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