Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

Abstract

Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals.