Photoluminescent method for studying the plastic deformation at the boudary of «SiO2–Si»

  • О. А. Kulinich Odesa national university of economics, Odesа, Ukraine
  • I. P. Yatsunskiy I. I. Mechnikov Odesa National University, Odesа, Ukraine
  • T. Yu. Eshtokina Odesa national university of economics, Odesа, Ukraine
  • G. I. Brusenskaya Odesa national university of economics, Odesа, Ukraine
  • I. A. Marchuk I. I. Mechnikov Odesa National University, Odesа, Ukraine
Keywords: photoluminescence, flowage, defects, dislocations, tensions

Abstract

The possibility of using the photoluminescence method for studying the mechanisms of plastic deformation at the boundary of "SiO2 — Si" in the process of obtaining nanostructured silicon layers by deformation.

Published
2012-02-28
How to Cite
KulinichО. А., Yatsunskiy, I. P., Eshtokina, T. Y., Brusenskaya, G. I., & Marchuk, I. A. (2012). Photoluminescent method for studying the plastic deformation at the boudary of «SiO2–Si». Technology and Design in Electronic Equipment, (2), 47-50. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2012.2.47
Issue
No. 2 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Kulinich O. A., Yatsunskiy I. P., Eshtokina T. Yu, Brusenskaya G. I., Marchuk I. A.

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This work is licensed under a Creative Commons Attribution 4.0 International License.