CCD photomatrixes with electron multiplication

  • V. P. Reva V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • S. V. Korinets V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • О. G. Golenkov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine https://orcid.org/0000-0001-8009-7161
  • S. V. Sapon V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • A. M. Torchinsky V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. V. Zabudsky V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine https://orcid.org/0000-0003-2033-8730
  • F. F. Sizov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: CCD photomatrix, electronic multiplication, near infrared, visible light

Abstract

Electron multiplication charge coupled devices (EMCCD) technology is an innovation first introduced slightly more than a decade ago. The EMCCD is an image sensor that is capable of detecting an isolated photon without an image intensifier. It is achieved by electron multiplication circuit that is built in the chip of ordinary CCD.
Cameras with EMCCD arrays overcome limitations of getting high sensitivity with high frame rate. Traditional CCD cameras can be highly sensitive in the visible part of the spectrum but at the expense of low frame rate. EMCCD can operate at very faint illumination conditions both in visible and near infrared regions.
The paper presents a short technological description of EMCCD 640×512 arrays manufacturing and some parameters of the arrays that were designed and manufactured. It was shown that multiplication coefficient depends much on applied amplification voltage and can achieve 1000. Also, it is shown that images can be obtained at low illumination conditions (illumination at EMCCD is near 5·10–4 lx).

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Published
2017-04-27