No. 4 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Method of modulation-demodulation of signals with quadrature variation of the angular component

  A. B. Kokhanov

  9-13

  • PDF (Українська)
• PSpice modeling of optoelectronic locators

  V. V. Yanko

  14-17

  • PDF (Українська)
• Capacitance of a thin rectangular conductor in an integrated circuit

  I. A. Konnikov

  18-23

  • PDF (Українська)
• System for monitoring toxic gas emissions at a thermal power plant

  Y. N. Maksimenko, Y. M. Tsvelych

  24-27

  • PDF (Українська)
• Ultrasonic piezoelectric transducer

  N. M. Pashaev

  28-29

  • PDF (Українська)
• Evaluation of potential redistribution in a three-barrier structure

  A. V. Karimov, D. M. Yodgorova, Sh. Sh. Boltaeva, L. Kh. Zoirova

  30-35

  • PDF (Українська)
• Prediction of parameter variation in Schottky barrier field effect transistors on GaAs

  N. B. Gorev, I. F. Kodzhespirova, E. N. Privalov

  36-39

  • PDF (Українська)
• Silicon thermostabilized p–i–n photodiode

  Yu. G. Dobrovolsky

  39-41

  • PDF (Українська)
• Position sensitive detector based on an anisotropic optothermal element

  A. A. Ascheulov, I. V. Gutsul, V. D. Photy

  42-44

  • PDF (Українська)
• Optimization of the fabrication process of a high-voltage lateral p-channel MOS transistor

  N. I. Leonov, A. M. Lemeshevskaya, N. L. Dudar, S. N. Getzman

  45-47

  • PDF (Українська)
• Heat-pipe coolers for thermally loaded PC components

  B. M. Rassamakin, V. A. Rogachev, S. M. Khayrnasov

  48-50

  • PDF (Українська)
• Power supply for contact microwelding with programmable welding pulse shape

  Yu. E. Paerand, A. F. Bondarenko

  51-54

  • PDF (Українська)
• Technological ion sources based on contracted discharges

  V. A. Nikitinsky, B. I. Zhuravlyov

  55-58

  • PDF (Українська)
• Physico-technological foundations for obtaining an abrupt p–n junction

  A. V. Karimov, D. M. Yodgorova, Sh.Sh. Yuldashev, Sh. Sh. Boltaeva

  59-60

  • PDF (Українська)
• Interaction of atomic hydrogen with the surface of silicon single crystals

  E. L. Zhavzharov, V. M. Matushin

  61-64

  • PDF (Українська)