Study of the metal–semiconductor contact based on HgMnTe

  • L. A. Kosyachenko Yurii Fedkovych Chernivtsi National University, Ukraine
  • A. V. Markov Yurii Fedkovych Chernivtsi National University, Ukraine
  • S. E. Ostapov Yurii Fedkovych Chernivtsi National University, Ukraine
  • I. M. Rarenko Yurii Fedkovych Chernivtsi National University, Ukraine
Keywords: metal–semiconductor contact, narrow-gap semiconductor, HgMnTe, Poisson equation, potential distribution, electric field strength, charge density, infrared radiation detectors

Abstract

The Poisson equation for a metal–narrow-gap semiconductor contact based on HgMnTe has been solved, and the distributions of potential, electric field strength, and charge density have been investigated. It is shown that as the bandgap narrows, the effect of free carriers becomes significant. The results can be used to calculate the parameters of infrared radiation detectors operating in the 3–5 µm and 8–14 µm spectral ranges.

Published
2002-06-30
How to Cite
Kosyachenko, L. A., Markov, A. V., Ostapov, S. E., & Rarenko, I. M. (2002). Study of the metal–semiconductor contact based on HgMnTe. Technology and Design in Electronic Equipment, (3), 3-5. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2002.3.03
Issue
No. 3 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Kosyachenko L. A., Markov A. V., Ostapov S. E., Rarenko I. M.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.