Non-volatile memory based on FLOTOX elements for electronic card LSI circuits

  • V. P. Sydorenko Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • V. N. Sydorchuk Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • O. N. Zabrodina Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • Yu. Ye. Nikolaienko Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
Keywords: non-volatile memory, FLOTOX cells, LSI circuits, electronic plastic cards, erase/write cycling, data retention

Abstract

The issues of constructing a memory matrix of electronic plastic card LSI circuits based on FLOTOX cells are considered. The analysis of factors affecting the parameters of FLOTOX cells in programming, erase/write cycling, and data retention modes is carried out. The results of the investigation of FLOTOX cells are presented.
Published
2002-06-30
How to Cite
Sydorenko, V. P., Sydorchuk, V. N., Zabrodina, O. N., & Nikolaienko, Y. Y. (2002). Non-volatile memory based on FLOTOX elements for electronic card LSI circuits. Technology and Design in Electronic Equipment, (3), 57-61. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2002.3.57
Issue
No. 3 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Sydorenko V. P., Sydorchuk V. N., Zabrodina O. N., Nikolaienko Yu. Ye.

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