Improvement of the reverse characteristics of Schottky diodes using gettering

V. Litvinenko; I. Vikulin; V. Gorbachev

doi:10.15222/TKEA2019.1-2.34

V. Litvinenko Kherson National Technical University, Kherson, Ukraine https://orcid.org/0000-0002-9425-5551
I. Vikulin Odessa National Academy of Telecommunications named after A. S. Popov, Odesа, Ukraine https://orcid.org/0000-0003-3887-6676
V. Gorbachev Odessa National Academy of Telecommunications named after A. S. Popov, Odesа, Ukraine https://orcid.org/0000-0002-6668-6864

DOI: https://doi.org/10.15222/TKEA2019.1-2.34

Keywords: gettering, reverse current, Schottky diode, impurities, oxidation stacking faults

Abstract

The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse side of the plate, on the value of the reverse current of diodes was experimentally investigated, and the physical factors of such influence were analyzed. The proposed technology for creating getter regions allows one to significantly reduce the reverse current of diodes and increase the product yield.

References

Drozdov А.V., Danilov D.S., Yusupov I.V., Ghoshin G.G. [Simulation of diodes with Schottky barrier for applying in monolithic microwave integrated circuits]. Doklady TUSUR, 2018, vol. 21, no. 1, pp. 28-31. (Rus)

Kerimov E.A. Electrical properties of contacts with the IrSi-Si-based Schottky barrier. Russian Microelectronics, 2015, vol. 44, iss. 4. pp. 244-247.

Vikulin I.M., Stafeev V.I. Fizika poluprovodnikovykh priborov [Physics of semiconductor devices]. Moscow, Radio і Svyаz’, 1990, 264 p. (Rus)

Khorosheva M.A., Kveder V.V., Seibt М. On the nature of defects produced by motion of dislocations in silicon. Physica Status Solidi A, 2015, vol. 212, iss. 8, pp. 1695-1703. https://doi.org/10.1002/pssa.201532153

Kveder V., Khorosheva М., Seibt М. Interplay of Ni and Au atoms with dislocations and vacancy defects generated by moving dislocations in Si. Solid State Phenomena, 2016, vol. 242. pp. 147-154. https://doi.org/10.4028/www. scientific.net/SSP.242.147

Loginov Yu.Yu., Mozsherin A.V., Brilikov A.V. [Effect of elastic stresses on the formation of structural defects in semiconductors]. Vestnik SibGAU, 2013, no. 2(48), pp. 198-200. (Rus)

Ravi K.V. Imperfactions and impurities in semiconductor silicon. New York, Wiley, 1981, 379 p.

Vikulin I.M., Litvinenko V.N., Shutov S.V. et al. Enhancing parameters of silicon varicaps using laser gettering. Tekhnologiya i konstruirovanie v elektronnoi apparature. 2018, no. 2, pp. 29-32. http://dx.doi. оrg/10.15222/TKEA2018.2.29

Rhoderick E. H. Metal-semiconductor contacts. Oxford, Clarendon Press, 1978, 201 p.

Solodukha V.A., Lanin V.L., Soloviev Ya.A. [Increasing the stability of the structures of the Schottky diodes with a guard ring to static electricity discharges]. Bulletin of Polotsk State University. Serie C: Fundamental Sciences. 2015, no.12. pp.72-81. (Rus)

Litvinenko V.N., Bohach N.V. [Defects and impurities in silicon and their gettering methods]. Vіsnik KhNTU, 2017, no. 1(60), pp. 32-42. (Rus)

Pilipenko V.A., Gorushko V.A., Petlitskiy A.N., Ponaryadov V.V., Turtsevich A.S., Shvedov S.V. Methods and mechanisms of gettering of silicon structures in the production of integrated circuits. Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2013, no. 2-3, pp. 43-57.

Bokhan Yu.I., Kamenkov V.S., Tolochko N.K. Dominant factors of the laser gettering of silicon wafers. Semiconductors, 2015, vol. 49, iss. 2, pp. 270-273. https:// doi.org/10.1134/S1063782615020050

Klimanov E.A. [Mechanism of gettering the generation-recombination centers in silicon at diffusion of phosphorus and boron]. Uspekhi prikladnoi fiziki, 2015, vol. 3, no. 2, pp. 121-125. (Rus)

Litvinenko V.M., Vikulin I.M. Influence of surface properties on the inverse characteristics of semiconductor devices. Bulletin of KhNTU, 2018, no. 1 (64), pp.46-56. (Rus)

Kruglov A.I., Krus A.P., Belyaev A.A. Optimization of the manufacturing technology of diode structures in order to reduce defect formation processes and improve the parameters of devices with a Schottky barrier. Electronic equipment. Ser. 8. Quality management, standardization, metrology, testing, 1989, iss. 2 (134). pp. 70-74. (Rus)

Anokhin V.Z. Practikum po himii I technologii poluprovodnikov [Practical work on chemistry and technology of semiconductors]. Ed. Ugai Ya.A, Moscow, Higher School, 1978, 264 p. (Rus)

Grafutin V.I., Prokop’ev E.P., Timoshenkov S.P. Gettering and synergetic approaches to the problem of silicon and silicon-based materials. Review. Nanotechnology Research and Practice, 2014, vol. 1, no. 1. pp. 4-26. http://dx.doi.org/10.13187/ejnr.2014.1.4п

Pat. UA 125518. Sposіb vigotovlennya dіoda Shottkі [Method of manufacturing a Schottky diode] / Litvinenko V.M., 2018, Bull. № 9. (Ukr)

Pat. UA 55798 А. [Method of fabricating structures of a diode with a Schottky barrier] / V.M. Litvinenko, S.V. Litvinenko. 2003, Bull. № 4. (Ukr)

Litvinenko V.M., Bogach M.V. Vplyv technologichnyh faktoriv na parametri diodiv Shottky [Influence of technological factors on the parameters of Schottky diodes]. Kherson, publ. by PP Vyshemirsky V.S., 2017, 116 p. (Ukr)

Labunov V.A., Baranov I.L., Bondarenko V.P., Dorofeev A.M. Sovremennye metody getterirovania v tehnologii poluprovodnikovoj electroniki. [Modern methods of gettering in semiconductor electronics technology]. Foreign electronics. 1983, no. 11 (270), pp. 3-66. (Rus)

Nemtsev G.Z., Pekarev A.I., Chistyakov Yu.D., Burmistrov A.N. Getterirovanie tochechnyh defectov v proizvodstve poluprovodnikovyh priborov. [Gettering of point defects in the production of semiconductor devices]. Foreign electronics. 1981, no. 11 (245), pp. 3-63. (Rus)