Measuring system for testing electrical parameters of EMCCDs of various formats

Viacheslav Zabudsky; Oleksandr Golenkov; Oleg Rikhalsky; Vladimir Reva; Sergij Korinets; Sergey Dukhnin

doi:10.15222/TKEA2019.5-6.03

Viacheslav Zabudsky V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine https://orcid.org/0000-0003-2033-8730
Oleksandr Golenkov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine https://orcid.org/0000-0001-8009-7161
Oleg Rikhalsky Bogomolets Institute of Physiology of NASU https://orcid.org/0000-0002-0812-4070
Vladimir Reva V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
Sergij Korinets V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
Sergey Dukhnin V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine

DOI: https://doi.org/10.15222/TKEA2019.5-6.03

Keywords: photodetectors, EMCCD, electron multiplying charge-coupled device, measuring system, photoelectric parameters

Abstract

This article describes the developed equipment that allows measuring the photoelectrical parameters of multielement photodetectors, specifically various formats of EMCCD (electron multiplying charge-coupled device) chips. The authors present the measuring techniques and test results on dark currents, output amplifier sensitivity, charge transfer efficiency, charge capacity and other parameters. The studies were conducted, both on the wafer and in the body, on samples of the following formats: 576×288, 640×512, 768×576, 1024×1024, and 1280×1024.

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