High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Mykola   Kukurudziak; Olga Andreeva; Volodymyr Lipka

doi:10.15222/TKEA2020.5-6.16

Mykola Kukurudziak Rhythm Optoelectronics Shareholding Company
Olga Andreeva Rhythm Optoelectronics Shareholding Company
Volodymyr Lipka Rhythm Optoelectronics Shareholding Company https://orcid.org/0009-0001-4419-3356

DOI: https://doi.org/10.15222/TKEA2020.5-6.16

Keywords: photodiode, silicon, sensitivity, technological mode

Abstract

The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.

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