Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки
Анотація
Представлены конструкция и технология изготовления структуры фотодиода Шоттки на основе подложки из радиационно стойкого кристалла n-In2Hg3Te6 с барьерным слоем из Cr, характеризуемого фотоответом в области 0,6—1,6 мкм при максимальной чувствительности 0,43 А/Вт на длине волны 1,55 мкм. Исследования электрических параметров этих фотодиодных структур показали, что высота потенциального барьера составляет 0,41 эВ, а величина обратного темнового тока не превышает 4 мкА. Созданные устройства сохраняют свою работоспособность при дозах гамма-облучения 2⋅108 бэр.
Посилання
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Авторське право (c) 2016 A. A. Ащеулов, A. B. Галочкин, И. С. Романюк, С. Г. Дремлюженко
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