Высокотемпературная люминесценция кристаллов ZnSe:Yb
Анотація
Исследовано влияние иттербия на люминесцентные свойства беспримесных кристаллов селенида цинка. Показано, что в спектрах излучения образцов ZnSe:Yb наблюдается только голубая полоса, имеющая экситонную природу и обладающая высокой температурной стабильностью.
Посилання
Georgobiani A.N., Kotlyarevsky M.B. Problems of creation of injection LEDs based on wide bandgap semiconductor compounds. Izvestiia AN SSSR. Ser. Phizika, 1985, vol. 49, no 10, pp. 1916-1922. (Rus)
Bogdankevich O.V. Semiconductor lasers pumped by an electron beam O. V. Bogdankevich. Electron-beam-pumped semiconductor lasers. Kvant. electron., 1994, vol. 21, no. 12, pp. 1113–1136 (Mi qe257) (Rus)
Berezhnoi K.V., Nasibov A.S., Shapkin P.V., Shpak V.G., Shunaylov S.A., Yalandin M.I. Emission of zinc selenide plates excited by a pulsed electric field. Quantum Electronics, 2008, vol. 38, no. 9, pp. 829-832. http://dx.doi.org/doi:10.1070/QE2008v038n09ABEH013814
Morozova N.K., Kuznetsov V.A., Ryzhykov V.D. Selenid tsinka. Poluchenie i opticheskie svoistva [Zinc selenide. Obtaining and optical properties]. Moscow, Nauka, 1992, 94 p. (Rus)
Nedeoglo D.D., Simashkevich A.V. Elektricheskie i lyuminestsentnie svoistva selenida tsinka [Electrical and luminescent properties of zinc selenide]. Chisinau, Shtiintsa, 1984, 150 p. (Rus)
Berezovsky M.M., Makhiy V.P., Melnyk V.V. [The influence of Li, Cd, In and As impurities on the optoelectronic properties of ZnSe]. Neorganicheskie materialy, 1997, vol. 33, no. 2, pp. 181-183. (Rus)
Gryvul V.I., Makhniy V.P., Slyotov M.M. The origin of edge luminescence in diffusion ZnSe:Sn layers.
Semiconductors, 2007, vol. 41, iss. 7, pp. 784-785. http://dx.doi.org/doi:10.1134/S1063782607070020
Sletov M.M. Edge luminescence from zinc selenide doped with isovalent magnesium impurity. Technical Physics Letters, 2001, vol. 27, iss. 1, pp. 63-64. http://dx.doi.org/doi:10.1134/1.1345168
Krasnov A.N., Vaksman Yu.F., Purtov Yu.N. The hole conductivity of single crystals with an excess of metalloid Pis’ma v ZhTF, 1992, vol. 18, no. 12, pp. 1-5. (Rus)
Makhniy V.P., Kinzerska O.V., Senko I.M , Asheulov A.A. [Luminescent properties of ZnSe: Yb crystals with modified surface]. Naukovyi visnyk ChNU. Fіzyka. Elektronіka, 2014, vol. 3, iss. 1, pp. 112-114. (Ukr)
Gorelenok A. T., Kamanin A. V., Shmidt N. M. Rare-earth elements in the technology of III–V compounds and devices based on these compounds, Semiconductors. 2003, vol. 37, iss. 8, pp. 894-914. http://dx.doi.org/10.1134/1.1601656
Glazov V. M., Timoshina G. G., Mikhailova M. S., Potemkin A. Ya. Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals, Semiconductors. 1997, vol. 31, iss. 9, pp. 875-878. http://dx.doi.org/doi:10.1134/1.1187158
Tkachenko I.V. [Mechanisms of defect formation and luminescence in the intrinsic and Te-doped crystals of zinc selenide]. Diss. kand. fiz.-mat. nauk, Yuriy Fedkovych Chernivtsi National University, 2005. (Ukr)
Koh Era, Langer D. W. Luminescence of ZnSe near the band edge under strong laser light excitation. J. Luminescence, 1970, vol. 1-2, pp. 514-527.
Makhnii V. P., Slyotov M. M., Chaban Yu. Ya. Hole conduction in zinc selenide crystals doped with elements of group V from the vapor phase. Technical Physics Letters, 2001, Vol. 26, iss. 1, pp. 6-7. http://dx.doi.org/10.1134/1.1262720
Авторське право (c) 2016 В. П. Махний, O. B. Кинзерская, И. М. Сенко, A. M. Слётов А. М.

Ця робота ліцензується відповідно до Creative Commons Attribution 4.0 International License.