Покращення параметрів планарного імпульсного діода при використанні гетерування
Анотація
Розглянуто причини та механізми впливу структурних дефектів на параметри імпульсного діода. Наведено експериментальні результати дослідження впливу гетерування, проведеного шляхом передокислювального високотемпературного відпалу пластин в атмосфері аргону, на параметри діодів. Показано, що пропонована технологія виготовлення структур імпульсного діода дозволяє істотно зменшити щільність дефектів пакування в активних областях діодів, у результаті чого знижується рівень зворотних струмів та зменшується розкид значень номінальної ємності діодів по площині пластини і, як наслідок, підвищується відсоток виходу придатних приладів.
Посилання
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