Застосування шару на основі матеріалів з фазовим переходом «метал — напівпровідник» для електротеплового захисту сонячних елементів
Анотація
СШляхом моделювання досліджено кінетичні залежності розподілів температури, струму і напруги фотоелектричного елемента з додатковим шаром на основі матеріалів з фазовим переходом «метал - напівпровідник», які знаходяться в тепловому контакті. Показано, що основою застосування таких терморезисторних шарів для реалізації захисту сонячних фотоелементів від електричного перегріву є істотне перевищення їхнього опору в «холодному» стані відносно опору освітленого прямозміщеного сонячного елемента, а також опір зазначених шарів, який у «нагрітому» стані має бути значно меншим за опір зворотнозміщеного фотоелемента та джерела живлення.
Посилання
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