Calculation of elastic mechanical stresses in inhomogeneous semiconductor structures

  • F. D. Kasimov Special Design Bureau of Space Instrumentation, Baku, Azerbaijan
  • A. E. Liutfalibekova Special Design Bureau of Space Instrumentation, Baku, Azerbaijan
Keywords: semiconductor structures, mechanical stresses, elastic constants, two-layer structures, film deposition temperature

Abstract

A mathematical calculation of elastic mechanical stresses in two-layer structures with differing elastic constants of the film and substrate is carried out. A formula is derived showing that the mechanical stresses arising in the film are proportional to its thickness and deposition temperature and inversely proportional to the substrate thickness.

Published
2002-04-30
How to Cite
Kasimov, F. D., & Liutfalibekova, A. E. (2002). Calculation of elastic mechanical stresses in inhomogeneous semiconductor structures. Technology and Design in Electronic Equipment, (2), 13-14. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2002.2.13
Issue
No. 2 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Kasimov F. D., Liutfalibekova A. E.

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