Information-measuring system for opto-capacitive spectroscopy of semiconductors

Abstract

The system allows investigating the optical properties of semiconductor materials, in particular, the band gap width and the ionization energy of impurities. It is based on the method of opto-capacitive spectroscopy. The method is non-contact and allows investigating samples of semiconductor materials whose thickness is less than the diffusion length of free charge carriers. The system consists of a monochromator, the solid-state structure under investigation, an opto-capacitive transducer, and a recorder. An algorithm for the automated tuning of the measurement channel is described.