Hall sensors based on GaAs structures obtained by low-temperature LPE from Bi melts

  • M. M. Vakiv SPA «Karat», Lviv, Ukraine
  • S. I. Krukovskyi SPA «Karat», Lviv, Ukraine
  • I. R. Zaverbnyi SPA «Karat», Lviv, Ukraine
  • I. A. Mrykhin SPA «Karat», Lviv, Ukraine
Keywords: Hall sensors, GaAs structures, bismuth melt, liquid phase epitaxy, low-temperature LPE, semi-insulating GaAs

Abstract

The features of obtaining s. i.-GaAs—n-GaAs:Sn epitaxial structures for Hall sensors by the low-temperature "bismuth" liquid phase epitaxy (LPE) method are considered. Based on these structures, Hall sensors were fabricated, featuring low temperature coefficients of the Hall voltage (0.08%/K) and residual voltage (0.1 μV/K), as well as a high normalized sensitivity (~150 V/A·T). A comparison of the uniformity of epitaxial structures manufactured by VPE, MOVPE, and LPE methods showed that the structures grown by low-temperature "bismuth" LPE are the most uniform in terms of thickness and concentration.
Published
2002-06-30
How to Cite
Vakiv, M. M., Krukovskyi, S. I., Zaverbnyi, I. R., & Mrykhin, I. A. (2002). Hall sensors based on GaAs structures obtained by low-temperature LPE from Bi melts. Technology and Design in Electronic Equipment, (3), 34-37. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2002.3.34
Issue
No. 3 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Vakiv M. M., Krukovskyi S. I., Zaverbnyi I. R., Mrykhin I. A.

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