Specifics of forming fast-recovery silicon diodes

Abstract

The dependence of the reverse recovery time (t_rr) on the annealing parameters of diode structures after electron irradiation with energies of 4 and 10 MeV and fluences of 6·10¹⁵ sm^–2 and 8·10¹⁴ sm^–2, respectively, has been investigated. Diodes with the minimum trr and maximum recovery current form factor (K_rr) were obtained after annealing structures irradiated with 4 MeV electrons at a fluence of 6·10¹⁵ sm^–2. The t_rr decreases with an increase in the ratio of the concentration of recombination centers E₃(0.37) to the concentration of other defects. At the same time, for silicon doped by transmutation nuclear reactions, the annealing temperature must be increased compared to Czochralski and float-zone silicon.