Calculation of transport properties of gamma-radiation detectors based on semi-insulating semiconductors

Abstract

A method has been developed for the rapid determination of charge transport parameters in dosimetric γ-radiation detectors based on high-resistivity semiconductors. The problem of calculating charge transport parameters in planar γ-radiation detectors based on semi-insulating CdTe (CdZnTe) using their dosimetric characteristics has been considered. Based on the results of simulation modeling, the applicability of the proposed method has been demonstrated for HgI₂ γ-radiation detectors. The proposed method can be used in the design of new spectrometric and dosimetric instruments for radiation safety monitoring and for controlling device characteristics during operation in high-radiation fields.