Some photoelectric features of the characteristics of a two-base Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au structure

  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • F. A. Giyasova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • R. A. Saidova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • F. A. Giyasova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: double-base structure, charge transport, photovoltaic, impurity, space-charge layer, isotype heterojunction

Abstract

The photoelectric characteristics of the fabricated double-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au structures, sensitive on both sides, have been investigated in photodiode and photovoltaic modes under irradiation determined by the intrinsic absorption region of each heterolayer. The obtained structures are of interest as noiseless photodetectors for opto- and microelectronics.

Published
2008-06-30
How to Cite
Yodgorova, D. M., Karimov, A. V., Giyasova, F. A., Saidova, R. A., & Giyasova, F. A. (2008). Some photoelectric features of the characteristics of a two-base Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au structure. Technology and Design in Electronic Equipment, (3), 46-49. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2008.3.46
Issue
No. 3 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Yodgorova D. M., Karimov A. V., Giyasova F. A., Saidova R. A.

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