Optical gas sensors based on semiconductor infrared radiation sources

Abstract

Various designs of optical gas sensors and gas analyzers based on them have been developed using low-power semiconductor infrared radiation sources operating in the wavelength range of 2.5–5.0 μm, fabricated on the basis of InGaAs/InAs and InAsSbP/InAs heterostructures. Experimental results are presented, demonstrating the feasibility of applying semiconductor infrared radiation sources in optical sensors for measuring the concentrations of methane (CН₄) and carbon dioxide (CO₂). The prospects of using such sensors in next-generation gas analysis instruments are shown.