Deposition of TiN and TiO₂ films in an inverted cylindrical magnetron by reactive sputtering

  • E. G. Kostin Institute for Nuclear Research of NASU, Kyiv, Ukraine
  • A. V. Demchyshyn I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Kyiv, Ukraine
Keywords: reactive sputtering, magnetron, optical radiation of plasma, TiN films, TiO2 films

Abstract

The results of a study of the optical emission of discharge plasma in the wavelength range of 350–820 nm and the discharge voltage of an inverted cylindrical magnetron under various flows of reactive gases (N₂, O₂) are presented. The variation in discharge voltage exhibits features that can be correlated with the composition of the films and with the changes in the intensity of spectral lines of titanium atoms and molecules of the reactive gases. It is shown that the deposition regime of TiN and TiO₂ films can be monitored both by the intensity of plasma-emitted lines of Ti, N₂, and O₂, and by measuring the discharge voltage. Optical monitoring of several components of the gaseous medium simultaneously is more informative. The optimal conditions for synthesizing stoichiometric TiN and TiO₂ films have been determined. X-ray phase analysis was carried out, and the microhardness of TiN films and the refractive index of TiO₂ films obtained under optimal conditions were measured.

Published
2008-08-30
How to Cite
Kostin, E. G., & Demchyshyn, A. V. (2008). Deposition of TiN and TiO₂ films in an inverted cylindrical magnetron by reactive sputtering. Technology and Design in Electronic Equipment, (4), 47-51. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2008.4.47