Fine structure of laser spectrum at electron-beam pumping based on radiation-modified optically homogeneous crystals of undoped GaAs

  • A. S. Garkavenko Wissenschaftliche Vereinigung «Geisteskraft», Kornwestheim, Germany
Keywords: radiation spectrum, laser, electron-beam pumping, radiation modification, gallium arsenide

Abstract

The influence of excitation level and temperature on the radiation parameters of lasers based on n-type GaAs crystals with high optical homogeneity, modified with the use of radiotechnologies.

Published
2011-10-17
How to Cite
Garkavenko, A. S. (2011). Fine structure of laser spectrum at electron-beam pumping based on radiation-modified optically homogeneous crystals of undoped GaAs. Technology and Design in Electronic Equipment, (5), 27-30. Retrieved from https://tkea.com.ua/index.php/journal/article/view/TKEA2011.5.27
Issue
No. 5 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Garkavenko A. S.

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