Дослідження можливості використання матеріалів на основі CdTeSe для детекторів іонізуючих випромінювань
Анотація
Представлено результати кількісних досліджень впливу вмісту домішок та структурних дефектів на електрофізичні та детекторні властивості CdTe0,9Se0,1 і CdTe0,95Se0,05, в тому числі з додаванням Mn, Mg, Zn. Досліджено вплив дефектів на питомий опір, концентрацію вільних носіїв заряду, рівень Фермі, час життя нерівноважних носіїв заряду та ефективність збору зарядів у детекторах випромінювань на основі CdTeSe:In при температурі 25°С. Встановлено залежності параметрів від вмісту домішок та вакансій кадмію і телуру. Розглянуто спосіб досягнення високоомного стану, характерного для матеріалу детекторної якості.
Посилання
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